90E32 Datasheet, PDF (7/71 Pages) Integrated Device Technology – Poly-Phase High-Performance Wide-Span Energy Metering IC

Poly-Phase High-Performance
Wide-Span Energy Metering IC
90E32
Preliminary Information*
FEATURES
Metering Features
• Metering features fully in compliance with the requirements of
IEC62052-11, IEC62053-22 and IEC62053-23, ANSI C12.1 and
ANSI C12.20; applicable in class 0.5S or class 1 poly-phase
watt-hour meter or class 2 poly-phase var-hour meter.
• Accuracy of ±0.1% for active energy and ±0.2% for reactive
energy over the dynamic range of 5000:1.
• Temperature coefficient is 6 ppm/ ℃ (typical) for on-chip refer-
ence voltage.
• Single-point calibration on each phase over the whole dynamic
range for active energy; no calibration needed for reactive/
apparent energy.
• ±1 ℃ (typical) temperature sensor accuracy.
• Electrical parameters measurement: less than ±0.5% fiducial
error for Vrms, Irms, mean active/ reactive/ apparent power, fre-
quency, power factor and phase angle.
• Active (forward/reverse), reactive (forward/reverse), apparent
energy with independent energy registers. Active/ reactive/
apparent energy can be output by pulse or read through energy
registers to adapt to different applications.
• Programmable startup and no-load power threshold, special
designed of startup and no-load circuits to eliminate crosstalk
among phases achieving better accuracy especially at low
power conditions.
• Dedicated ADC and different gains for phase A/B/C current sam-
pling circuits. Current sampled over current transformer (CT) or
Rogowski coil (di/dt coil); phase A/B/C voltage sampled over
resistor divider network or potential transformer (PT).
GENERAL DESCRIPTION
The 90E32 is a poly-phase high performance wide-dynamic range
metering IC. The 90E32 incorporates 6 independent 2nd order sigma-
delta ADCs, which could be employed in three voltage channels (phase
A, B and C) and three current channels (phase A, B, C) in a typical
three-phase four-wire system.
The 90E32 has an embedded DSP which executes calculation of
active energy, reactive energy, apparent energy, fundamental and har-
monic active energy over ADC signal and on-chip reference voltage.
The DSP also calculates measurement parameters such as voltage and
current RMS value as well as mean active/reactive/apparent power.
• Programmable power modes: Normal mode (N mode), Idle
mode (I mode), Detection mode (D mode) and Partial Measure-
ment mode (M mode).
• Fundamental (CF3, 0.2%) and harmonic (CF4, 1%) active
energy with dedicated energy and power registers.
• Event detection: sag, phase loss, reverse voltage/ current phase
sequence, reverse flow, calculated neutral line current I_NC over-
current and THD+N over-threshold.
Other Features
• 3.3V single power supply. Operating voltage range: 2.8V~3.6V.
Metering accuracy guaranteed within 3.0V~3.6V.
• Four-wire SPI interface.
• Parameter diagnosis function and programmable interrupt output
of the IRQ interrupt signals and the WarnOut signal.
• Programmable voltage sag detection and zero-crossing output.
• CF1/CF2/CF3/CF4 output active/ reactive/ apparent energy
pulses and fundamental/ harmonic energy pulses respectively.
• Crystal oscillator frequency: 16.384 MHz. On-chip two capacitors
and no need of external capacitors.
• TQFP48 package.
• Operating temperature: -40 ℃ ~ +85 ℃ .
APPLICATION
• Poly-phase energy meters of class 0.5S and class 1 which are
used in three-phase four-wire (3P4W, Y0) or three-phase three-
wire (3P3W, Y or ∆) systems.
• Power monitoring instruments which need to measure voltage,
current, mean power, etc.
A four-wire SPI interface is provided between the 90E32 and the
external microcontroller.
The 90E32 is suitable for poly-phase multi-function meters which
could measure active/reactive/apparent energy and fundamental/har-
monic energy either through four independent energy pulse outputs
CF1/CF2/CF3/CF4 or through the corresponding registers.
IDT's proprietary ADC and auto-temperature compensation technol-
ogy for reference voltage ensure the 90E32's long-term stability over
variations in grid and ambient environment conditions.
IDT and the IDT logo are trademarks of Integrated Device Technology, Inc.
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 2011 Integrated Device Technology, Inc.
*Notice: The information in this document is subject to change without notice
December 9, 2011