7132SA100J Datasheet, PDF (5/16 Pages) Integrated Device Technology – HIGH SPEED 2K x 8 DUAL PORT STATIC RAM

IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range (VCC = 5.0V ± 10%)
7132SA
7142SA
7132LA
7142LA
Symbol
|ILI|
Parameter
Input Leakage Current⁽¹⁾
Test Conditions
VCC = 5.5V,
VIN = 0V to VCC
Min.
Max.
Min.
Max. Unit
___
10
___
5
µA
|ILO|
Output Leakage Current
VOL
Output Low Voltage
VCC = 5.5V,
CE = VIH, VOUT = 0V to VCC
IOL = 4mA
___
10
___
5
µA
___
0.4
___
0.4
V
VOL
Open Drain Output
Low Voltage (BUSY)
IOL = 16mA
___
0.5
___
0.5
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
NOTE:
1. At Vcc < 2.0V leakages are undefined.
2692 tbl 05
Data Retention Characteristics (LA Version Only)
Symbol
Parameter
Test Condition
VDR
VCC for Data Retention
VCC = 2.0V
ICCDR
Data Retention Current
CE > VCC -0.2V
Mil. & Ind.
VIN > VCC -0.2V or
Com'l.
tCDR⁽³⁾
Chip Deselect to Data Retention Time
VIN < 0.2V
tR⁽³⁾
Operation Recovery Time
NOTES:
1. VCC = 2V, TA = +25°C, and is not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed but not production tested.
Min.
2.0
___
___
0
tRC⁽²⁾
Typ.⁽¹⁾
___
100
100
___
___
Max.
___
4000
1500
___
___
Unit
V
µA
µA
ns
ns
2692 tbl 06
Data Retention Waveform
DATA RETENTION MODE
VCC
CE
4.5V
tCDR
VIH
VDR≥ 2.0V
VDR
4.5V
tR
VIH
,
2692 drw 05
6.542