HY29LV400 Datasheet, PDF (7/40 Pages) Hynix Semiconductor – 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

HY29LV400
Table 3. HY29LV400 Normal Bus Operations ¹
Operation
CE#
OE#
DQ[15:8] ³
WE# RESET# Address ² DQ[7:0]
BYTE# = H BYTE# = L
Read
Write
Output Disable
L
L
H
H
A_IN
D_OUT
D_OUT
High-Z
L
H
L
H
A_IN
D_IN
D_IN
High-Z
L
H
H
H
X
High-Z High-Z High-Z
CE# Normal Standby
H
X
X
H
X
High-Z High-Z High-Z
CE# Deep Standby V_CC ± 0.3V X
X V_CC ± 0.3V
X
High-Z High-Z High-Z
Hardware Reset
(Normal Standby)
X
X
X
L
X
High-Z High-Z High-Z
Hardware Reset
(Deep Standby)
X
X
X V_SS ± 0.3V
X
High-Z High-Z High-Z
Notes:
1. L = V_IL, H = V_IH, X = Don’t Care (L or H), D_OUT = Data Out, D_IN = Data In. See DC Characteristics for voltage levels.
2. Address is A[17:0, -1] in Byte Mode and A[17:0] in Word Mode.
3. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).
Table 4. HY29LV400 Bus Operations Requiring High Voltage ^{1, 2}
Operation ³
CE# OE# WE# RESET# A[19:12] A[9] A[6] A[1] A[0]
DQ[7:0]
DQ[15:8]
BYTE# BYTE#
=H =L⁵
Sector Protect
LHL
V_ID
SA ⁴
X
LHL
D_IN/D_OUT
X
X
Sector Unprotect
LHL
V_ID
Temporary Sector
Unprotect ⁶
-- -- --
V_ID
X
X H H L D_IN/D_OUT
X
X
--
-- -- -- --
--
--
--
Manufacturer Code L L H
H
X
V_ID L L L
0xAD
X High-Z
Device ^HY29LV400B
Code _HY29LV400T
L
L
H
H
0xBA
X
V_ID L L H
0xB9
0x22 High-Z
Sector Protection
Verification
LLH
H
0x00 =
Unprotected
SA ⁴ V_ID L H L
0x01 =
X High-Z
Protected
Notes:
1. L = V_IL, H = V_IH, X = Don’t Care (L OR H). See DC Characteristics for voltage levels.
2. Address bits not specified are Don’t Care.
3. See text and for additional information.
4. SA = Sector Address. See Tables 1 and 2.
5. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).
6. Normal read, write and output disable operations are used in this mode. See Table 3.
Rev. 1.0/Nov. 01
7