HY29LV400 Datasheet, PDF(34/40 Page) Hynix Semiconductor – 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

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HY29LV400 Datasheet, PDF (34/40 Pages) Hynix Semiconductor – 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

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HY29LV400

AC CHARACTERISTICS

Addresses

WE#

OE#

CE#

Data

RY/BY#

RESET#

0x555 for Program

0x2AA for Erase

PA for Program

SA for Sector Erase

0x555 for Chip Erase

tWC

tAS

tAH

tGHEL

tW H

tWS

tCP

tCPH

tWHWH1 or tWHWH2 or tWHWH3

tDS

tDH

tBUSY

0xA0 for Program

0x55 for Erase

PD for Program

0x30 for Sector Erase

0x10 for Chip Erase

Status

tRH

D OUT

Notes:

1. PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write Opera-

tion Status section), DOUT = array data read at VA.

2. Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.

3. Word mode addressing shown.

4. RESET# shown only to illustrate tRH measurement references. It cannot occur as shown during a valid command

sequence.

Figure 26. Alternate CE# Controlled Write Operation Timings

Rev. 1.0/Nov. 01

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