HY29LV400 Datasheet, PDF (35/40 Pages) Hynix Semiconductor – 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

Latchup Characteristics
Description
Minimum
Input voltage with respect to V_SS on all pins except I/O
pins(including A[9], OE# and RESET#)
- 1.0
Input voltage with respect to V_SS on all I/O pins
- 1.0
V_CC Current
- 100
Notes:
1. Includes all pins except V_CC. Test conditions: V_CC = 3.0V, one pin at a time.
Maximum
12.5
V_CC + 1.0
100
HY29LV400
Unit
V
V
mA
TSOP and PSOP Pin Capacitance
Symbol
Parameter
C_IN Input Capacitance
C_OUT Output Capacitance
C_IN2 Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions: T_A = 25 ºC, f = 1.0 MHz.
Data Retention
Parameter
Minimum Pattern Data Retention Time
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
Typ
Max
Unit
6
7.5
pF
8.5
12
pF
7.5
9
pF
Test Conditions
150 ºC
125 ºC
Minimum
10
20
Unit
Years
Years
Rev. 1.0/Nov. 01
35