HY29LV400 Datasheet, PDF (30/40 Pages) Hynix Semiconductor – 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

HY29LV400
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data (last two cycles)
Addresses
CE#
OE#
WE#
Data
RY/BY#
t_WC
t_AS
0x2AA
t_GHWL
t_CH
t_WP
t_CS
t_DS
0x55
t_WPH
t_DH
t_AH
SA
VA
Address = 0x555
for chip erase
0x30
Data = 0x10
for chip erase
t_WHWH2 or
t_WHWH3
Status
t_BUSY
VA
D_OUT
t_RB
V_CC
t_VCS
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
D is the true data at the read address.(0xFF after an erase operation).
OUT
2. Commands shown are for Word mode operation.
3. V_CC shown only to illustrate t_VCS measurement references. It cannot occur as shown during a valid command sequence.
Figure 20. Sector/Chip Erase Operation Timings
30
Rev. 1.0/Nov. 01