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HY29LV400 Datasheet, PDF (33/40 Pages) Hynix Semiconductor – 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
AC CHARACTERISTICS
V ID
RESET# VIH
HY29LV400
SA, A[6],
A[1], A[0]
Data
CE#
WE#
Don't Care
Valid *
Sector Protect/Unprotect
0x60
0x60
tVRES
tPROT
tUNPR
Valid *
Verify
0x40
Valid *
Status
OE#
Note: For Sector Protect, A[6] = 0, A[1] = 1, A[0] = 0. For Sector Unprotect, A[6] = 1, A[1] = 1, A[0] = 0.
Figure 25. Sector Protect and Unprotect Timings
Alternate CE# Controlled Program and Erase Operations 2
Parameter
JEDEC Std
Description
tAVAV
tWC Write Cycle Time 1
Min
tAVEL
tAS Address Setup Time
Min
tELAX
tAH Address Hold Time
Min
tDVEH
tDS Data Setup Time
Min
tEHDX
tDH Data Hold Time
Min
tGHEL tGHEL Read Recovery Time Before Write
Min
tWLEL
tWS WE# Setup Time
Min
tEHWH
tWH WE# Hold Time
Min
tELEH
tCP CE# Pulse Width
Min
tEHEL
tCPH CE# Pulse Width High
Min
tBUSY CE# to RY/BY# Delay
Min
Notes:
1. Not 100% tested.
2. See Program and Erase Operations table for program and erase characteristics.
Speed Option
- 55 - 70 - 90
55 70 90
0
45 45 45
35 35 45
0
0
0
0
35 35 35
30
90
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev. 1.0/Nov. 01
33