HY57V651620B Datasheet, PDF (6/12 Pages) Hynix Semiconductor – 4 Banks x 1M x 16Bit Synchronous DRAM

D C C H A R A C T E R I S T I C S I I ( T A = 0 t o 7 0 °C , V D D =3.3 ± 0 . 3 V^Note5, V SS = 0 V )
HY57V651620B
Parameter
Symbol
Test Condition
-55 -6
Speed
Unit Note
-7 - 7 5 -8 - 1 0 P - 1 0 S -10
Operating Current
ID D 1
Burst length=1, One bank active
tRC ≥ tR C(min), IOL = 0 m A
120 110 100 90
80
7 0 700 80 m A
1
Precharge Standby Current
in Power Down Mode
ID D 2 P
ID D 2 P S
CKE ≤ VIL(max), tC K = min
CKE ≤ VIL(max), tC K = ∞
2
mA
2
mA
C K E ≥ V IH ( m i n ) , C S ≥ V I H ( m i n ) , t C K
= min
IDD2N
Input signals are changed one time
15
mA
Precharge Standby Current
during 2clks. All other pins ≥ VDD -
in Non Power Down Mode
0.2V or ≤ 0.2V
ID D 2 N S
C K E ≥ V IH ( m i n ) , t C K = ∞
Input signals are stable.
15
mA
Active Standby Current
in Power Down Mode
ID D 3 P
ID D 3 P S
CKE ≤ VIL(max), tC K = min
CKE ≤ VIL(max), tC K = ∞
5
mA
5
mA
C K E ≥ V IH ( m i n ) , C S ≥ V I H ( m i n ) , t C K
= min
IDD3N
Input signals are changed one time
30
mA
Active Standby Current
during 2clks. All other pins ≥ VDD -
in Non Power Down Mode
0.2V or ≤ 0.2V
ID D 3 N S
C K E ≥ V IH ( m i n ) , t C K = ∞
Input signals are stable.
30
mA
Burst Mode Operating Current IDD4
tCK ≥ tCK (min),
IOL= 0 m A
All banks active
CL=3
150 140 130 120 110 90
9 0 90 m A
1
CL=2
90
90
90
90
90
90
90
90 m A
Auto Refresh Current
ID D 5
tR R C ≥ tR R C (min), All banks active 200 200 200 200 200 180 180 150 mA
2
Self Refresh Current
ID D 6
CKE ≤ 0.2V
2
mA
3
500
uA
4
Note :
1.ID D 1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V651620BTC-55/6/7/75/8/10P/10S/10
4.HY57V651620BLTC-55/6/7/75/8/10P/10S/10
5..VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Rev. 1.9/Apr.01
6