HY57V651620B Datasheet, PDF (5/12 Pages) Hynix Semiconductor – 4 Banks x 1M x 16Bit Synchronous DRAM

C A P A C I T A N C E ( T A= 25°C , f=1MHz)
Parameter
Input capacitance
Data input / output capacitance
Pin
CLK
A0 ~ A11, BA0, BA1, CKE, C S, RAS,
CAS, W E, UDQM, LDQM
DQ0 ~ DQ15
OUTPUT LOAD CIRCUIT
Symbol
C I1
CI 2
Min
2
2.5
C I/O
2
HY57V651620B
Max
4
5
6.5
Unit
pF
pF
pF
Output
V t t= 1 . 4 V
RT=250 Ω
Output
50pF
50 pF
DC Output Load Circuit
AC Output Load Circuit
D C C H A R A C T E R I S T I C S I (TA=0 to 70°C , VDD =3.3 ±0.3V^Note3)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
IL O
VOH
VOL
Min.
-1
-1
2.4
-
Note :
1 . V I N = 0 t o 3 . 6 V , A l l o t h e r p i n s a r e n o t t e s t e d u n d e r V IN = 0 V
2.DOUT is disabled, V OUT=0 to 3.6
3..VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Max
1
1
-
0.4
Unit
uA
uA
V
V
Note
1
2
IO H = - 4 m A
IOL = + 4 m A
Rev. 1.9/Apr.01
5