HY57V651620B Datasheet, PDF (4/12 Pages) Hynix Semiconductor – 4 Banks x 1M x 16Bit Synchronous DRAM

ABSOLUTE MAXIMUM RATINGS
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V S S
Voltage on V D D relative to V SS
Short Circuit Output Current
Power Dissipation
Soldering Temperature ⋅ Time
Symbol
TA
TSTG
VIN, VO U T
VDD, VDDQ
IO S
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 ⋅ 10
Note : Operation at above absolute maximum rating can adversely affect device reliability
D C O P E R A T I N G C O N D I T I O N (TA=0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VDD, VDDQ
V IH
V IL
Min
3.0
2.0
VSSQ - 2.0
Typ.
3.3
3.0
0
Note :
1.All voltages are referenced to VSS = 0V
2.VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
3.V IH (max) is acceptable 5.6V AC pulse width with ≤3ns of duration
4.V IL (min) is acceptable -2.0V AC pulse width with ≤3ns of duration
Max
3.6
VDDQ + 2.0
0.8
A C O P E R A T I N G C O N D I T I O N ( T A = 0 t o 7 0 °C , V D D=3.3 ± 0 . 3 V^Note2, V SS = 0 V )
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level
Output Load Capacitance for Access Time Measurement
Symbol
V I H / V IL
Vtrip
tR / tF
Voutref
CL
Value
2.4/0.4
1.4
1
1.4
50
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
2. VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
HY57V651620B
Unit
°C
°C
V
V
mA
W
°C ⋅ S e c
Unit
V
V
V
Note
1,2
1,3
1,4
Unit
V
V
ns
V
pF
Note
1
Rev. 1.9/Apr.01
4