 English |
|
|
|
|
|
|
|
| HY57V651620B Datasheet, PDF (10/12 Pages) Hynix Semiconductor – 4 Banks x 1M x 16Bit Synchronous DRAM | |||
| |||
| ◁ |
HY57V651620B(L)TC-10S
100MHz(10ns)
83MHz(12ns)
66MHz(15ns)
CAS
Latency
3CLKs
2CLKs
2CLKs
57V651620B(L)TC-10
tRCD
3CLKs
2CLKs
2CLKs
100MHz(10ns)
83MHz(12ns)
66MHz(15ns)
CAS
Latency
3CLKs
2CLKs
2CLKs
tRCD
3CLKs
2CLKs
2CLKs
tRAS
5CLKs
5CLKs
4CLKs
tRAS
5CLKs
5CLKs
4CLKs
tRC
8CLKs
7CLKs
6CLKs
tRC
8CLKs
7CLKs
6CLKs
tRP
3CLKs
2CLKs
2CLKs
tRP
3CLKs
2CLKs
2CLKs
tAC
6ns
6ns
6ns
tAC
8ns
6ns
6ns
tOH
3ns
3ns
3ns
tOH
3ns
3ns
3ns
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese