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HAT3008RJ Datasheet, PDF (9/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching | |||
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( P Channel )
HAT3008R/HAT3008RJ
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 Drive Operation
0
50
100
150
200
Ambient Temperature Ta (°C)
â100
Maximum Safe Operation Area
â30
10 µs
â10
â3
â1
â0.3
â0.1
â0.03
PW
100
1 ms
µs
OperationDiCnOperation
this area is
limited by R DS(on)
(PW
= 10 ms
< 1N0oste) 6
Ta = 25 °C
â0.01 1 shot pulse
â0.1 â0.3 â1 â3 â10 â30
â100
Drain to Source Voltage V DS (V)
Note 6 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
â10
â10 V
â5 V
â8
â4 V
â3.5 V
Pulse Test
â6
â3 V
â4
â2
VGS = â2.5 V
0
â2 â4 â6 â8 â10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
â10
V DS = 10 V
Pulse Test
â8
â6
â4
Tc = 75 °C
25 °C
â2
â25 °C
0
â1 â2 â3 â4 â5
Gate to Source Voltage V GS (V)
9
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