HAT3008RJ Datasheet, PDF (7/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching

Body–Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
V_GS = 0, Ta = 25 °C
200
100
50
20
10
5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I _DR (A)
HAT3008R/HAT3008RJ
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
Coss
100
50
Crss
20 V_GS = 0
10 ^{f = 1 MHz}
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
100
20
I _D = 5A
80
V_DS
60
40
16
V_GS
12
V _DD = 10 V
25 V
50 V ⁸
20
V _DD = 50 V
4
25 V
10 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
1000
Switching Characteristics
300
t _d(off)
100
30
tf
tr
t _d(on)
10
3
1
0.1 0.2
V_GS = 10 V, V _DD = 30 V
PW = 5 µs, duty < 1 %
0.5 1 2
5 10
Drain Current I _D (A)
7