HAT3008RJ Datasheet, PDF (5/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching

Main Characteristics ( N Channel )
HAT3008R/HAT3008RJ
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
10 µs
30
10
3
1
0.3
0.1
PW
= ₁₀
Operation^Di^Cn^Operation
this area is
(PW
limited by R DS(on) ^<
1
100
ms
µs
ms _(1shot)
1^N₀^o_s^te_{) 5}
0.03 Ta = 25 °C
0.01 ^{1 shot pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
10
10 V
4V
8
3.5 V
3V
6
Pulse Test
4
2.5 V
2
V_GS = 2 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
10
V _DS = 10 V
Pulse Test
8
6
25°C
Tc = 75°C
4
–25°C
2
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
5