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HAT3008RJ Datasheet, PDF (4/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching
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HAT3008R/HAT3008RJ
( P Channel )
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage
HAT3008R
drain current
HAT3008RJ
Zero gate voltage
HAT3008R
drain current
HAT3008RJ
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note: 5. Pulse test
Symbol Min
V(BR)DSS
V(BR)GSS
I GSS
I DSS
I DSS
I DSS
I DSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
– 60
± 20
—
—
—
—
—
–1.2
—
—
3
—
Coss —
Crss —
t d(on)
—
tr
—
t d(off)
—
tf
—
VDF
—
t rr
—
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
–1
µA
—
–0.1 µA
—
—
µA
—
–10 µA
— –2.2 V
0.12 0.15 Ω
0.16 0.23 Ω
4.5 —
S
600 —
pF
290 —
pF
75 —
pF
11 —
ns
30 —
ns
100 —
ns
55 —
ns
– 0.98 – 1.28 V
70 —
ns
Test Conditions
ID = – 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 16 V, VDS = 0
VDS = – 60 V, VGS = 0
VDS = – 48 V, VGS = 0
Ta = 125°C
VDS = – 10 V, I D = – 1mA
ID = – 2 A, VGS = – 10 V Note4
ID = – 2 A, VGS = – 4 V Note4
ID = – 2 A, VDS = –10 V Note4
VDS = –10 V
VGS = 0
f = 1MHz
VGS = –10 V, ID = – 2 A
VDD ≅ – 30 V
IF = – 3.5 A, VGS = 0 Note4
IF = – 3.5 A, VGS = 0
diF/ dt = 50 A/µs
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