HAT3008RJ Datasheet, PDF (3/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3008R/HAT3008RJ
Electrical Characteristics (Ta = 25°C)
( N Channel )
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltage
HAT3008R I_DSS
drain current
HAT3008RJ I_DSS
Zero gate voltage
HAT3008R I_DSS
drain current
HAT3008RJ I_DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
60
± 20
—
—
—
—
—
1.2
—
—
6
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Typ Max Unit
—
—
V
—
—
V
—
± 10 µA
—
1
µA
—
0.1 µA
—
—
µA
—
10
µA
—
2.2 V
0.043 0.058 Ω
0.056 0.084 Ω
9
—
S
520 —
pF
270 —
pF
100 —
pF
11
—
ns
40
—
ns
110 —
ns
80
—
ns
0.84 1.1 V
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ± 100 µA, V_DS = 0
V_GS = ± 16 V, V_DS = 0
V_DS = 60 V, V_GS = 0
V_DS = 48 V, V_GS = 0
Ta = 125°C
V_DS = 10 V, I _D = 1 mA
I_D = 3 A, V_GS = 10 V ^Note4
I_D = 3 A, V_GS = 4 V ^Note4
I_D = 3 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1MHz
V_GS =10 V, I_D = 3 A
V_DD ≅ 30 V
IF = 5 A, V_GS = 0 ^Note4
Body–drain diode reverse
recovery time
Note: 5. Pulse test
t _rr
—
40 —
ns
IF =5 A, V_GS = 0
diF/ dt = 50 A/µs
3