HAT3008RJ Datasheet, PDF (6/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3008R/HAT3008RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
ID=5A
0.2
2A
0.1
1A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
V_GS = 4 V
0.05
10 V
0.02
0.01
0.1 0.3 1 3 10 30 100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
1, 2 A
ID=5A
0.08
V _GS = 4 V
1, 2, 5 A
0.04
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
V _DS = 10 V
Pulse Test
20
10
Tc = –25 °C
5
25 °C
75 °C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I _D (A)
6