|
HAT3008RJ Datasheet, PDF (10/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching | |||
|
◁ |
HAT3008R/HAT3008RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
â0.5
Pulse Test
â0.4
â0.3
I D = â2 A
â0.2
â1 A
â0.1
â0.5 A
0
â4 â8 â12 â16 â20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
VGS = â4 V
0.1
â10 V
0.05
0.02
0.01
â0.1 â0.3 â1 â3 â10 â30
Drain Current I D (A)
â100
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
0.2 VGS = â4 V
I D = â2 A
â1 A
â0.5 A
â2 A
0.1
â10 V
â0.5, â1 A
0
â40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
V DS = 10 V
10 Pulse Test
Ta = â25 °C
5
25 °C
2
75 °C
1
0.5
0.2
â0.1 â0.2 â0.5 â1 â2
â5 â10
Drain Current I D (A)
10
|
▷ |