HAT3008RJ Datasheet, PDF (2/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3008R/HAT3008RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Nch
Pch
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode
reverse drain current
V_DSS
V_GSS
I_D
I ^Note1
D(pulse)
I _DR
60
– 60
V
±20
± 20
V
5
– 3.5
A
40
– 28
A
5
– 3.5
A
Avalanche current
HAT3008R
I Note4
AP
HAT3008RJ
—
—
—
5
– 3.5
A
Avalanche energy
HAT3008R
E Note4
AR
HAT3008RJ
—
—
—
2.14
1.05
mJ
Channel dissipation
Pch ^Note2
2
2
W
Channel dissipation
Pch ^Note3
3
3
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
– 55 to + 150 –55 to + 150 °C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
4. Value at Tch=25°C, Rg≥50Ω
2