HAT3008RJ Datasheet, PDF (8/15 Pages) Hitachi Semiconductor – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3008R/HAT3008RJ
Reverse Drain Current vs.
Source to Drain Voltage
10
10 V
8
5V
6
V_GS = 0, –5 V
4
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Maximun Avalanche Energy vs.
Channel Temperature Derating
2.5
I _AP = 5 A
2.0
V _DD = 25 V
L = 100 µH
duty < 0.1 %
1.5
Rg > 50 Ω
1.0
0.5
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
E_AR =
1
2
• L • I _AP²â€¢
V_DSS
V_DSS – V _DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50Ω
VDD
= 30 V
Switching Time Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
8