GS4576C36GL-25I Datasheet, PDF(9/63 Page) GSI Technology – 576Mb CIO Low Latency DRAM (LLDRAM II)

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GS4576C36GL-25I Datasheet, PDF (9/63 Pages) GSI Technology – 576Mb CIO Low Latency DRAM (LLDRAM II)

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PowerâUp Initialization Flow Chart

Step

VDD and VEXT ramp

VDDQ ramp

Apply VREF and VTT

Apply stable CK/CK and DK/DK

Wait at least 200ïs

Issue MRS commandâA10âA17 must be Low

7 Issue MRS commandâA10âA17 must be Low

8 Desired load mode register with A10âA17 Low

Assert NOP for tMRSC

Issue AUTO REFRESH to bank 0

Issue AUTO REFRESH to bank 1

Issue AUTO REFRESH to bank 2

Issue AUTO REFRESH to bank 3

Issue AUTO REFRESH to bank 4

Issue AUTO REFRESH to bank 5

Issue AUTO REFRESH to bank 6

Issue AUTO REFRESH to bank 7

Wait 1024 NOP commands*

Valid command

GS4576C09/18/36L

Voltage rails can

be applied

simultaneously

MRS commands

must be on

consecutive

clock cycles

*Note:

The sequence of the eight AUTO REFRESH commands (with respect to the 1024 NOP commands) does not matter. As is required for any

operation, tRC must be met between an AUTO REFRESH command and a subsequent VALID command to the same bank.

Rev: 1.04 11/2013

9/62

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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