MB82DBS08164D-70L Datasheet, PDF (4/60 Pages) Fujitsu Component Limited. – 128 M Bit (8 M word x 16 bit) Mobile Phone Application Specific Memory

MB82DBS08164D-70L
■ FUNCTION TRUTH TABLE
1. Asynchronous Operation
Mode
CE2 CE1 CLK ADV WE OE LB UB A22 to A0 DQ7 to DQ0 DQ15 to DQ8 WAIT
Standby
(Deselect)
HH X X XXXX
X
High-Z High-Z High-Z
Output Disable*¹
X *3 H H X X *5 High-Z High-Z High-Z
Output Disable
(No Read)
X *3
H H Valid High-Z High-Z High-Z
Read (Upper Byte)
Read (Lower Byte)
X *3
H
L Valid High-Z
Output
Valid
High-Z
HL
X *3
L
H
Valid
Output
Valid
High-Z High-Z
Read (Word)
H L _{X *3}
L
L
Valid
Output
Valid
Output
Valid
High-Z
No Write
X *3
H H Valid Invalid Invalid High-Z
Write (Upper Byte)
X *3
H L Valid Invalid Input Valid High-Z
Write (Lower Byte)
X
*3
L H*⁴ _L
H Valid
Input
Valid
Invalid High-Z
Write (Word)
X *3
L
L Valid
Input
Valid
Input Valid High-Z
Power Down*²
LX X X XXXX
X
High-Z High-Z High-Z
Note : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance
*1 : Should not be kept this logic condition longer than 1 μs.
*2 : Power Down mode can be entered from Standby state and all output are in High-Z state.
Data retention depends on the selection of Partial Size for Power Down Program. Refer to "Power Down" in
"■FUNCTIONAL DESCRIPTION" for the details.
*3 : "L" for address pass through and "H" for address latch on the rising edge of ADV.
*4 : OE can be VIL during write operation if the following conditions are satisfied;
(1) Write pulse is initiated by CE1. Refer to "(12) Asynchronous Read/Write Timing 1-1 (CE1 Control)" in
"■TIMING DIAGRAMS".
(2) OE stays VIL during Write cycle.
*5 : Can be either VIL or VIH but must be valid before Read or Write.
4
DS05-11454-1E