MC9S12DG128MPVE Datasheet, PDF (90/128 Pages) Freescale Semiconductor, Inc – Device User Guide

MC9S12DT128B Device User G^Fu^rid^ee^e—^sV^c0^a1.^l0^e9 ^{Semiconductor, Inc.}
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table A-2 ESD and Latch-up Test Conditions
Model
Human Body
Machine
Latch-up
Description
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Minimum input voltage limit
Maximum input voltage limit
Symbol
R1
C
–
R1
C
–
Value
1500
100
–
3
3
0
200
–
3
3
–2.5
7.5
Unit
Ohm
pF
Ohm
pF
V
V
Table A-3 ESD and Latch-Up Protection Characteristics
Num C
Rating
1 C Human Body Model (HBM)
2 C Machine Model (MM)
3 C Charge Device Model (CDM)
Latch-up Current at 125°C
4 C positive
negative
Latch-up Current at 27°C
5 C positive
negative
Symbol
V_HBM
V_MM
V_CDM
I_LAT
I_LAT
Min
2000
200
500
+100
–100
+200
–200
Max
–
–
–
–
–
Unit
V
V
V
mA
mA
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE: Please refer to the temperature rating of the device (C, V, M) with regards to the
ambient temperature T_A and the junction temperature T_J. For power dissipation
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