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MRF6VP2600HR6 Datasheet, PDF (9/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |||
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Zsource
f = 225 MHz
Zo = 10 â¦
Zload
f = 225 MHz
VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg.
f
MHz
Zsource
â¦
Zload
â¦
225
1.42 + j8.09
4.45 + j1.16
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
--
Matching
Network
--
Z source
+
Z load
Figure 20. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
9
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