MRF6VP2600HR6 Datasheet, PDF (18/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2008 • Initial Release of Data Sheet
1
July 2008 • Removed Capable of Handling 5:1 VSWR bullet, p. 1
• Corrected Z_source and Z_load values from 1.58 + j6.47 to 1.42 + j8.09 and 4.60 + j1.85 to 4.45 + j1.16 and re-
plotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9
2
Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to de-
note that each side of device is measured separately, p. 5
• Updated Fig. 5, DC Safe Operating Area, to show one side of the device, p. 5
• Figs. 21 and 27, Series Equivalent Source and Load Impedance, corrected Z_source copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Z_load copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration”, p. 9, 14
2.1
Nov. 2008 • Corrected Figs. 21 and 27 Revision History Z_load copy to read ”Test circuit impedance as measured from
drain to drain, balanced configuration”, p. 9, 14
4
May 2009 • Updated bullets in Features section to reflect consistent listing across products, p. 1
• Added thermal data for 352.2 MHz application to Table 2, Thermal Characteristics, p. 1
• Added Typical Performances table for 352.2 MHz application, p. 2
• Added Fig. 28, Test Circuit Component Layout -- 352.2 MHz and Table 7, Test Circuit Component Designations
and Values -- 352.2 MHz, p. 15
• Added Fig. 29, CW Power Gain and Drain Efficiency versus Output Power -- 352.2 MHz p. 16
• Added Fig. 30, Series Equivalent Source and Load Impedance -- 352.2 MHz, p. 17
4.1
June 2009 • Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, Table 5, Test Circuit
Component Designations and Values and Table 6, Test Circuit Component Designations and Values —
88--108 MHz, p. 3, 11
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 20
5
May 2010 • Changed 10--500 MHz to 2--500 MHz in Device Description box, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Added thermal data for 88--108 MHz application to Thermal Characteristics table, p. 1
• Added Typical Performance table for 88--108 MHz application, p. 2
• Removed Fig. 20, MTTF versus Junction Temperature -- Pulsed and renumbered accordingly, p. 8
• Replaced Fig. 22 Test Circuit Component Layout, Table 6. Test Circuit Component Designations and Values,
the Typical Characteristic curves and Fig. 27 Series Impedance for 88--108 MHz with improved circuit
performance figures. The 88--108 MHz application circuit is also now a more compact size., p. 10--12
5.1
July 2010 • Fig. 24, Series Impedance for 88--108 MHz, table and plot updated to reflect correct location of Z_source and
Z_load, p. 12
MRF6VP2600HR6
18
RF Device Data
Freescale Semiconductor