MRF6VP2600HR6 Datasheet, PDF (7/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS — OFDM
100
10
1
0.1
8K Mode DVB--T OFDM
64 QAM Data Carrier Modulation
0.01 _{5 Symbols}
0.001
0.0001
0
2
4
6
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 14. Single--Carrier DVB--T OFDM
--20
7.61 MHz
--30
--40
--50
4 kHz BW
4 kHz BW
--60
--70
ACPR Measured at 4 MHz Offset
from Center Frequency
--80
--90
8K Mode DVB--T OFDM
--100
64 QAM Data Carrier Modulation, 5 Symbols
--110
--5 --4 --3 --2 --1 0 1 2 3 4 5
f, FREQUENCY (MHz)
Figure 15. 8K Mode DVB--T OFDM Spectrum
25.8
25.6 ^{IDQ = 2600 mA}
25.4 ^{2300 mA}
25.2 ^{2000 mA}
25
1800 mA
24.8
24.6 1300 mA
24.4
24.2
30
V_DD = 50 Vdc, f = 225 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 16. Single--Carrier DVB--T OFDM Power
Gain versus Output Power
--56
V_DD = 50 Vdc, f = 225 MHz
--58
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
--60
--62
I_DQ = 1300 mA
--64
1800 mA
--66
2000 mA
2300 mA
--68
2600 mA
20
100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 17. Single--Carrier DVB--T OFDM ACPR
versus Output Power
45
--56
25_C _{--30_C}
40
85_C
--58
ACPR
35
--60
30
25_C
T_C = --30_C
25
85_C
20
15
30
η_D
--62
G_ps
--64
V_DD = 50 Vdc, I_DQ = 2600 MHz
f = 225 MHz, 8K Mode OFDM _--66
64 QAM Data Carrier Modulation
5 Symbols
--68
100
400
P_out, OUTPUT POWER (WATTS) AVG.
Figure 18. Single--Carrier DVB--T OFDM ACPR Power
Gain and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
7