MRF6VP2600HR6 Datasheet, PDF (11/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS — 88--108 MHz
30
29 ^{VDD = 50 Vdc, IDQ = 150 mA}
85
108 MHz
80
28
108 MHz
27
26 _{98 MHz}
G_ps
25
88 MHz
24
75
98 MHz
70
88 MHz
65
60
55
23
η_D
50
22
45
21
40
20
100
35
200
300 400 500 600 700 800
P_out, OUTPUT POWER (WATTS)
Figure 22. Broadband CW Power Gain and Drain
Efficiency versus Output Power — 88--108 MHz
27
82
26.5
V_DD = 50 Vdc, I_DQ = 150 mA
P_out = 600 W, CW
81
26
80
25.5
G_ps
79
25
78
24.5
77
24
76
23.5
75
η_D
23
74
22.5
73
22
72
86
90
94
98
102
106
110
f, FREQUENCY (MHz)
Figure 23. CW Power Gain and Drain Efficiency
versus Frequency — 88--108 MHz
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
11