MRF6VP2600HR6 Datasheet, PDF (5/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

1000
C_oss
100
10
C_rss
TYPICAL CHARACTERISTICS
100
C_iss
Measured with ±30 mV(rms)ac @ 1 MHz
10
V_GS = 0 Vdc
T_J = 200_C
T_J = 150_C
T_J = 175_C
1
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
26.5
80
G_ps
26
70
25.5
60
25
V_DD = 50 Vdc, I_DQ = 2600 mA
f = 225 MHz
50
Pulse Width = 100 μsec
24.5 _{Duty Cycle = 20%}
η_D
40
24
30
23.5
20
23
10
22.5
10
0
100
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
26
25
50 V
24
45 V
23
40 V
V_DD = 50 Vdc
I_DQ = 2600 mA
35 V
22 f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
21
V_DD = 30 V
0 100 200 300 400 500 600 700
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
T_C = 25_C
1
1
10
100
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
64
P3dB = 59.7 dBm (938 W)
62
P2dB = 59.1 dBm (827 W)
60 P1dB = 53.3 dBm (670 W)
58
Ideal
Actual
56
54
V_DD = 50 Vdc, I_DQ = 2600 mA, f = 225 MHz
Pulse Width = 12 μsec, Duty Cycle = 1%
52
27 28 29 30 31 32 33 34 35 36 37 38
P_in, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
28
80
27
G_ps
70
T_C = --30_C
26
60
25_C
25
50
85_C
24
40
V_DD = 50 Vdc, I_DQ = 2600 mA
23 ^{f = 225 MHz}
η_D
30
Pulse Width = 100 μsec
22 ^{Duty Cycle = 20%}
20
21
10
10
100
1000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
5