MRF6VP2600HR6 Datasheet, PDF (12/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 25 Ω
f = 88 MHz
Z_source
f = 108 MHz
f = 108 MHz
Z_load
f = 88 MHz
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 600 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
88
3.20 + j14.50
10.35 + j2.80
98
4.20 + j15.00
9.50 + j3.00
108
4.00 + j15.00
8.90 + j3.50
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
--
Matching
Network
--
Z _source
+
Z _load
Figure 24. Series Equivalent Source and Load Impedance — 88--108 MHz
MRF6VP2600HR6
12
RF Device Data
Freescale Semiconductor