MRF6VP2600HR6 Datasheet, PDF(2/19 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF6VP2600HR6 Datasheet, PDF (2/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (Minimum)

Machine Model (per EIA/JESD22--A115)

A (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (1)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain--Source Breakdown Voltage

(ID = 150 mA, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS = 0 Vdc)

IGSS

Î¼Adc

V(BR)DSS

110

Vdc

IDSS

Î¼Adc

IDSS

2.5

On Characteristics

Gate Threshold Voltage (1)

(VDS = 10 Vdc, ID = 800 Î¼Adc)

VGS(th)

1.65

Vdc

Gate Quiescent Voltage (2)

(VDD = 50 Vdc, ID = 2600 mAdc, Measured in Functional Test)

VGS(Q)

1.5

2.7

3.5

Vdc

Drain--Source On--Voltage (1)

(VGS = 10 Vdc, ID = 2 Adc)

VDS(on)

0.25

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

1.7

Output Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

101

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc Â± 30 mV(rms)ac @ 1 MHz)

Ciss

287

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg., f = 225 MHz, DVB--T

OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ Â±4 MHz Offset.

Power Gain

Drain Efficiency

Gps

Î·D

28.5

Adjacent Channel Power Ratio

ACPR

--61

--59

dBc

Input Return Loss

IRL

--18

--9

Typical Performance â 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW

Power Gain

Gps

Drain Efficiency

Î·D

Input Return Loss

IRL

--15

Typical Performance â 88--108 MHz (In Freescale 88--108 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W

Power Gain

Gps

24.5

Drain Efficiency

Î·D

Input Return Loss

IRL

--5

1. Each side of device measured separately.

2. Measurement made with device in push--pull configuration.

MRF6VP2600HR6

RF Device Data

Freescale Semiconductor

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