MRF6VP2600HR6 Datasheet, PDF (1/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz.
Device is unmatched and is suitable for use in broadcast applications.
• Typical DVB--T OFDM Performance: V_DD = 50 Volts, I_DQ = 2600 mA,
P_out = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,
Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
Power Gain — 25 dB
Drain Efficiency — 28.5%
ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth
• Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 2600 mA,
P_out = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty
Cycle = 20%
Power Gain — 25.3 dB
Drain Efficiency — 59%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak
Power, Pulse Width = 100 μsec, Duty Cycle = 20%
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP2600H
Rev. 5.1, 7/2010
MRF6VP2600HR6
2--500 MHz, 600 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
PART IS PUSH--PULL
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
Table 1. Maximum Ratings
(Top View)
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
--0.5, +110
Vdc
V_GS
--6.0, +10
Vdc
T_stg
-- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, I_DQ = 2600 mA
Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, I_DQ = 150 mA
Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, I_DQ = 150 mA
R_θJC
0.20
0.14
0.16
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
1