MRF6VP2600HR6 Datasheet, PDF (14/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS — 352.2 MHz
23
80
22 ^VDD ^{= 50 Vdc}
G_ps
70
I_DQ = 150 mA
21 f = 352.2 MHz
60
20
50
η_D
19
40
18
30
17
20
16
10
15
0
10
100
1000
P_out, OUTPUT POWER (WATTS) CW
Figure 26. CW Power Gain and Drain Efficiency
versus Output Power
MRF6VP2600HR6
14
RF Device Data
Freescale Semiconductor