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33781 Datasheet, PDF (9/44 Pages) Freescale Semiconductor, Inc – Quad DSI 2.02 Master with Differential Drive and Frequency Spreading
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.75V ≤ VCC ≤ 5.25V, 9.0V ≤ VSUPn ≤ 25V,-40°C ≤ TA ≤ 90°C, unless otherwise
noted. Voltages relative to GND, unless otherwise noted. Typical values noted reflect the approximate mean values of the
parameter at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CLOCK
CLK Periods (System requirement)(10)
Time High
Time Low
Period
CLK Transition (System requirement)(10)
Time for Low-to-High Transition of the CLK Input Signal
Time for High-to-Low Transition of the CLK Input Signal
Reset Low Time
SPI INTERFACE TIMING
tCLKHI
tCLKLO
tCLKPER
tCLKLH
tCLKHL
tRSTLO
ns
75
–
–
75
–
–
245
250
255
ns
–
–
100
–
–
100
100
–
–
ns
SPI Clock Cycle Time
SPI Clock High Time
SPI Clock Low Time
SPI CSn Lead Time(11)
SPI CSn Lag Time(11)
SPI CS0 Time Between Bursts(10)
SPI CS1 Time Between Bursts(10)
Data Setup Time
MOSI0 Valid Before SCLK0 Rising Edge(11)
tCYC
tHI
tLO
tLEAD
tLAG
tCS0HI
tCS1HI
tSU
100
–
40
–
40
–
50
–
50
–
80
–
300
–
10
–
–
ns
–
ns
–
ns
–
ns
–
ns
–
ns
–
ns
ns
–
Data Hold Time
MOSI0 Valid After SCLK0 Rising Edge(11),(10)
tH
Data Valid Time
tV
SCLKn Falling Edge to MISOn Valid, C = 50pF(12)
ns
10
–
–
ns
–
–
25
Output Disable Time
CSn Rise to MISOn Hi-Z
Rise Time (30% VCC to 70% VCC)(10)
SCLKn, MOSI0
Fall Time (70% VCC to 30% VCC)(10)
SCLKn, MOSI0
tDIS
ns
–
–
50
tR
ns
–
–
10
tF
ns
–
–
10
Notes
10. Not measured in production.
11. SPI signal timing from the production test equipment is programmed to ensure compliance.
12. Conditions are verified indirectly during test.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33781
9