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| MRF6VP121KHR6 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
23
70
VDD = 50 Vdc
22 IDQ = 150 mA
60
f = 1030 MHz
21 Pulse Width = 128 μsec
Gps
50
Duty Cycle = 10%
20
40
19
TC = -30_C
30
18
25_C
ηD
20
17
85_C
16
1
10
10
0
100
1000
10000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
109
109
108
108
107
107
106
106
105
105
104
90
110 130
150 170
190 210
230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 128 μsec,
Duty Cycle = 10%, and ηD = 56%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature -
128 msec, 10% Duty Cycle
104
90
110 130 150 170
190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Mode-S Pulse Train,
Pulse Width = 32 μsec, Duty Cycle = 6.4%, and ηD = 59%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature -
Mode-S
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
7
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