MRF6VP121KHR6 Datasheet, PDF (14/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
f = 1090 MHz
Z_load
f = 1090 MHz
Z_source
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak
f
MHz
Z_source
W
Z_load
W
1090
2.98 + j3.68
1.51 + j2.02
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
-
Z _source
-
+
Z _load
Output
Matching
Network
Figure 19. Series Equivalent Source and Load Impedance — 1090 MHz
MRF6VP121KHR6 MRF6VP121KHSR6
14
RF Device Data
Freescale Semiconductor