MRF6VP121KHR6 Datasheet, PDF (10/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 785 MHZ
20.5
60
20
V_DD = 50 Vdc
I_DQ = 150 mA
55
19.5 f = 785 MHz
50
19
Pulse Width = 128 μsec
Duty Cycle = 10%
45
18.5
40
G_ps
18
35
17.5
30
17
η_D
25
16.5
20
16
15
15.5
10
10
100
1000
3000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 15. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6VP121KHR6 MRF6VP121KHSR6
10
RF Device Data
Freescale Semiconductor