MRF6VP121KHR6 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
• Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 150 mA, P_out =
1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
Duty Cycle = 10%
ąPower Gain — 20 dB
ąDrain Efficiency — 56%
• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak
Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Designed for Push-Pull Operation
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP121KH
Rev. 2, 12/2009
MRF6VP121KHR6
MRF6VP121KHSR6
965-1215 MHz, 1000 W, 50 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D-05, STYLE 1
NI-1230
MRF6VP121KHR6
CASE 375E-04, STYLE 1
NI-1230S
MRF6VP121KHSR6
PARTS ARE PUSH-PULL
Table 1. Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Rating
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Symbol
V_DSS
V_GS
T_stg
T_C
T_J
Value
-0.5, +110
-6.0, +10
-ā65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
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