MRF6VP121KHR6 Datasheet, PDF (19/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
Date
Description
June 2009 • Initial Release of Data Sheet
June 2009
• Added Pulsed RF Performance tables for 785 MHz and 1090 MHz applications, p. 3
• Added Figs. 13 and 16, Test Circuit Component Layout - 785 MHz and 1090 MHz, and Tables 6 and 7, Test
Circuit Component Designations and Values - 785 MHz and 1090 MHz, p. 9, 12
• Added Figs. 14 and 17, Pulsed Power Gain and Drain Efficiency versus Output Power - 785 MHz and
1090 MHz, p. 10, 13
• Added Figs. 15 and 18, Series Equivalent Source and Load Impedance - 785 MHz and 1090 MHz, p. 11, 14
Dec. 2009
• Added thermal data for 1030 MHz Mode-S application to Table 2, Thermal Characteristics, reporting of
pulsed thermal data now shown using the Z_θJC symbol, p. 2
• Added Typical Performances table for 1030 MHz Mode-S application, p. 3
• Added Fig. 12, MTTF versus Junction Temperature - 1030 MHz Mode-S, p. 7
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
19