MRF6VP121KHR6 Datasheet, PDF (13/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1090 MHZ
22
60
V_DD = 50 Vdc
21
I_DQ = 150 mA
f = 1090 MHz
50
Pulse Width = 128 μsec
20 Duty Cycle = 10%
40
G_ps
19
30
η_D
18
20
17
10
16
0
10
100
1000
3000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 18. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
13