MRF6VP121KHR6 Datasheet, PDF (6/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
1000
C_oss
100
22
60
V_DD = 50 Vdc
C_iss
21 ^{IDQ = 150 mA}
50
f = 1030 MHz
G_ps
Pulse Width = 128 μsec
20 _{Duty Cycle = 10%}
40
19
10
C_rss
Measured with ±30 mV(rms)ac @ 1 MHz
V_GS = 0 Vdc
18
17
30
20
η_D
10
1
0
10
20
30
40
50
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain-Source Voltage
16
0
1
10
100
1000
10000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
22
Ideal
21.5
21
P1dB = 1065 W (60.3 dBm)
20.5
20
P3dB = 1182 W (60.7 dBm)
19.5
V_DD = 50 Vdc
19 IDQ = 150 mA
f = 1030 MHz
18.5 _{Pulse Width = 128 μsec}
Duty Cycle = 10%
18
500 600 700 800
Actual
900 1000 1100 1200 1300
P_out, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
23
I_DQ = 150 mA, f = 1030 MHz
22 ^{Pulse Width = 128 μsec}
Duty Cycle = 10%
21
20
19
18
V_DD = 30 V _{35 V} 40 V 45 V 50 V
17
16
0
200 400 600 800 1000 1200 1400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
25
24
23
I_DQ = 6000 mA
22
3000 mA
21
20
1500 mA
19
750 mA
18
375 mA
V_DD = 50 Vdc
f = 1030 MHz
17
150 mA
Pulse Width = 128 μsec
Duty Cycle = 10%
16
1
10
100
1000
10000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
65
60
55
T_C = -30_C
50
25_C
45
85_C
40
20
25
30
V_DD = 50 Vdc
I_DQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
35
40
45
P_in, INPUT POWER (dBm) PULSED
Figure 9. Pulsed Output Power versus
Input Power
MRF6VP121KHR6 MRF6VP121KHSR6
6
RF Device Data
Freescale Semiconductor