MRF6VP121KHR6 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Z_θJC
°C/W
Case Temperature 67°C, 1000 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle,
0.02
ą50 Vdc, I_DQ = 150 mA
Case Temperature 62°C, Mode-S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec
0.07
ąOff, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, I_DQ = 150 mA
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
B (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽³⁾
Gate-Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
10
μAdc
Drain-Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 165 mA)
V_(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
100
μAdc
On Characteristics
Gate Threshold Voltage ⁽³⁾
(V_DS = 10 Vdc, I_D = 1000 μAdc)
Gate Quiescent Voltage ⁽⁴⁾
(V_DD = 50 Vdc, I_D = 150 mAdc, Measured in Functional Test)
Drain-Source On-Voltage ⁽³⁾
(V_GS = 10 Vdc, I_D = 2.7 Adc)
V_GS(th)
0.9
1.6
2.4
Vdc
V_GS(Q)
1.5
2.2
3
Vdc
V_DS(on)
—
0.15
—
Vdc
Dynamic Characteristics ⁽³⁾
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.27
—
pF
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
86.7
—
pF
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_iss
—
539
—
pF
Functional Tests ⁽⁴⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak (100 W Avg.),
f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G_ps
19
20
22
dB
Drain Efficiency
η_D
54
56
—
%
Input Return Loss
IRL
—
-23
-9
dB
ăĂ1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Ăă3. Each side of device measured separately.
Ăă4. Measurement made with device in push-pull configuration.
(continued)
MRF6VP121KHR6 MRF6VP121KHSR6
2
RF Device Data
Freescale Semiconductor