MRF6VP121KHR6 Datasheet, PDF (3/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Pulsed RF Performance — 785 MHz (In Freescale 785 MHz Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W
Peak (100 W Avg.), f = 785 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G_ps
—
18.9
—
dB
Drain Efficiency
η_D
—
57.8
—
%
Input Return Loss
IRL
—
-16.6
—
dB
Pulsed RF Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W
Peak (100 W Avg.), f = 1030 MHz, Mode-S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty
Cycle
Power Gain
G_ps
—
19.8
—
dB
Drain Efficiency
η_D
—
59.0
—
%
Burst Droop
BD_rp
—
0.21
—
dB
Pulsed RF Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W
Peak (100 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G_ps
—
21.4
—
dB
Drain Efficiency
η_D
—
56.3
—
%
Input Return Loss
IRL
—
-25.3
—
dB
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
3