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MC33912_10 Datasheet, PDF (60/94 Pages) Freescale Semiconductor, Inc – LIN System Basis Chip with DC Motor Pre-driver and Current Sense
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
MC33912BAC / MC34912BAC
Table 35. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C for the 33912 and -40°C ≤ TA ≤ 85°C for the
34912, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
LIN PHYSICAL LAYER, TRANSCEIVER (LIN)(111)
Symbol
Min
Typ
Max
Unit
Output Current Limitation
Dominant State, VBUS = 18 V
IBUSLIM
mA
40
120
200
Leakage Output Current to GND
Dominant State; VBUS = 0 V; VBAT = 12 V
IBUS_PAS_dom
-1.0
–
–
mA
Recessive State; 8.0 V < VBAT < 18 V; 8.0 V < VBUS < 18 V; VBUS ≥ VBAT IBUS_PAS_REC
–
–
20
µA
GND Disconnected; GNDDEVICE = VSUP; VBAT = 12 V; 0 < VBUS < 18 V IBUS_NO_GND
-1.0
–
1.0
mA
VBAT Disconnected; VSUP_DEVICE = GND; 0 < VBUS < 18 V
IBUS
–
–
100
µA
Receiver Input Voltages
Receiver Dominant State
Receiver Recessive State
Receiver Threshold Center (VTH_DOM + VTH_REC)/2
Receiver Threshold Hysteresis (VTH_REC - VTH_DOM)
VBUSDOM
–
VSUP
–
0.4
VBUSREC
0.6
–
–
VBUS_CNT
0.475
0.5
0.525
VHYS
–
–
0.175
LIN Transceiver Output Voltage
Recessive State, TXD HIGH, IOUT = 1.0 µA
VLIN_REC
VSUP -1.0
–
Dominant State, TXD LOW, 500 Ω External Pull-up Resistor, LDVS = 0 VLIN_DOM_0
–
1.1
Dominant State, TXD LOW, 500 Ω External Pull-up Resistor, LDVS = 1 VLIN_DOM_1
–
1.7
V
–
1.4
2
LIN Pull-up Resistor to VSUP
Over-temperature Shutdown(112)
Over-temperature Shutdown Hysteresis
RSLAVE
20
30
60
kΩ
TLINSD
150
165
180
°C
TLINSD_HYS
–
10
–
°C
Notes
111. Parameters guaranteed for 7.0 V ≤ VSUP ≤ 18 V.
112. When over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR is set.
33912
60
Analog Integrated Circuit Device Data
Freescale Semiconductor