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MC33912_10 Datasheet, PDF (18/94 Pages) Freescale Semiconductor, Inc – LIN System Basis Chip with DC Motor Pre-driver and Current Sense
MC33912G5AC / MC34912G5AC
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C for the 33912 and -40°C ≤ TA ≤ 85°C for the
34912, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0KBIT/SEC ACCORDING TO LIN PHYSICAL
LAYER SPECIFICATION(53), (54)
Duty Cycle 1:
THREC(MAX) = 0.744 * VSUP
THDOM(MAX) = 0.581 * VSUP
D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs, 7.0 V ≤ VSUP ≤ 18 V
D1
0.396
—
—
Duty Cycle 2:
THREC(MIN) = 0.422 * VSUP
THDOM(MIN) = 0.284 * VSUP
D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs, 7.6 V ≤ VSUP ≤ 18 V
D2
—
—
0.581
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER
SPECIFICATION(53), (55)
Duty Cycle 3:
THREC(MAX) = 0.778 * VSUP
THDOM(MAX) = 0.616 * VSUP
D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs, 7.0 V ≤ VSUP ≤ 18 V
D3
0.417
—
—
Duty Cycle 4:
THREC(MIN) = 0.389 * VSUP
THDOM(MIN) = 0.251 * VSUP
D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs, 7.6 V ≤ VSUP ≤ 18 V
D4
—
—
0.590
Notes
53. Bus load RBUS and CBUS 1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. Measurement thresholds: 50% of TXD signal to LIN signal
threshold defined at each parameter. See Figure 6, page 21.
54. See Figure 7, page 21.
55. See Figure 8, page 21.
33912
18
Analog Integrated Circuit Device Data
Freescale Semiconductor