MC9S08JM60_09 Datasheet, PDF (369/388 Pages) Freescale Semiconductor, Inc – HCS08 Microcontrollers

Appendix A Electrical Characteristics
SS
(INPUT)
1
3
SCK
(CPOL = 0)
(INPUT)
2
5
4
SCK
(CPOL = 1)
(INPUT)
MISO
(OUTPUT)
MOSI
(INPUT)
5
4
10
SEE
NOTE
SLAVE
MSB OUT
8
6
7
MSB IN
11
BIT 6 . . . 1
BIT 6 . . . 1
9
SLAVE LSB OUT
LSB IN
NOTE:
1. Not defined but normally LSB of character just received
Figure A-13. SPI Slave Timing (CPHA = 1)
A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations.
Table A-16. Flash Characteristics
Num C
Characteristic
Symbol
Min
Typ¹
Max
Unit
1
Supply voltage for program/erase
V_prog/erase
2.7
5.5
2
Supply voltage for read operation
V_Read
2.7
5.5
3
Internal FCLK frequency²
f_FCLK
150
200
4
Internal FCLK period (1/FCLK)
5
Byte program time (random location)⁽²⁾
6
Byte program time (burst mode)⁽²⁾
7
Page erase time³
8
Mass erase time⁽²⁾
9
C Program/erase endurance⁴
T_L to T_H = –40°C to + 85°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
5
6.67
9
4
4000
20,000
10,000
—
—
—
100,000 —
10
Data retention⁵
t_{D_ret}
15
100
—
1 _{Typical values are based on characterization data at VDD = 5.0 V, 25°C unless otherwise stated.}
V
V
kHz
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
years
MC9S08JM60 Series Data Sheet, Rev. 3
Freescale Semiconductor
369