K20P144M100SF2 Datasheet, PDF (31/67 Pages) Freescale Semiconductor, Inc – K20 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
Table 18. Flash command timing characteristics (continued)
Symbol Description
Min.
Typ.
Max.
Unit
Notes
t_eewr32bers Longword-write to erased FlexRAM location exe‐
—
cution time
200
TBD
μs
t_eewr16b32k Longword-write to FlexRAM execution time (32
—
TBD
TBD
ms
KB EEPROM backup)
t_eewr16b64k Longword-write to FlexRAM execution time (64
—
TBD
2.7
ms
KB EEPROM backup)
t_eewr32b128k Longword-write to FlexRAM execution time (128
—
TBD
TBD
ms
KB EEPROM backup)
t_eewr32b256k Longword-write to FlexRAM execution time (256
—
TBD
3.7
ms
KB EEPROM backup)
1. Assumes 25MHz flash clock frequency.
y _{2. Maximum times for erase parameters based on expectations at cycling end-of-life.}
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
ar _{6.4.1.3 Flash (FTFL) Current and Power Parameters}
Table 19. Flash (FTFL) current and power parameters
in ^Symbol
I_{DD_PGM}
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
lim ^{6.4.1.4 Reliability Characteristics}
Table 20. NVM reliability characteristics
e Symbol Description
r _{tnvmretp10k Data retention after up to 10 K cycles}
P ^{tnvmretp1k Data retention after up to 1 K cycles}
Min.
Program Flash
5
10
Typ.¹
TBD
TBD
Max.
—
—
Unit
years
years
Notes
2
2
t_nvmretp100 Data retention after up to 100 cycles
15
TBD
—
years
2
n_nvmcycp Cycling endurance
10 K
TBD
—
cycles
3
Data Flash
t_nvmretd10k Data retention after up to 10 K cycles
5
TBD
—
years
2
t_nvmretd1k Data retention after up to 1 K cycles
10
TBD
—
years
2
t_nvmretd100 Data retention after up to 100 cycles
15
TBD
—
years
2
n_nvmcycd Cycling endurance
10 K
TBD
—
cycles
3
FlexRAM as EEPROM
t_nvmretee100 Data retention up to 100% of write endurance
5
TBD
—
years
2
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
31