MC33937 Datasheet, PDF (15/48 Pages) Freescale Semiconductor, Inc – Three Phase Field Effect Transistor Pre-driver

ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 8.0 V  V_PWR = V_SUP  40 V, -40 C  T_A  135 C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT SENSE AMPLIFIER (CONTINUED)
Output Rise Time to 90% ⁽⁵⁰⁾
RL = 1.0 k, C_L = 500 pF, 0.3 V < V_O < 4.8 V, Gain = 5.0 to 15
Output Fall Time to 10% ⁽⁵⁰⁾
RL = 1.0 kC_L = 500 pF, 0.3 V < V_O < 4.8 V, Gain = 5.0 to 15
Slew Rate at Gain = 5.0⁽⁴⁹⁾
RL = 1.0 k, C_L = 20 pF
Phase Margin at Gain = 5.0⁽⁴⁹⁾
Unity Gain Bandwidth ⁽⁴⁹⁾
RL = 1.0 k, C_L = 100 pF
Bandwidth at Gain = 15 ⁽⁴⁹⁾
R_L = 1.0 k, C_L = 50 pF
Common Mode Rejection (CMR) ⁽⁴⁹⁾ with V_IN
V_{IN_CM} = 400 mV*sin(2**freq*t)
V_IN__DIF = 0.0 V, RS = 1.0 k
R_FB = 15 k, V_REFIN = 0.0 V
CMR = 20*Log(V_OUT/V_IN__CM)
Freq = 100 kHz
Freq = 1.0 MHz
Freq = 10 MHz
t_{IS_RISE}
–
µs
–
1.0
t_{IS_FALL}
–
µs
–
1.0
SR⁽⁵⁾
5.0
–
V/µs
–
f_M
–
30
–
°
G_BW
MHz
–
20
–
BW_G
2.0
–
MHz
–
CMR
dB
50
–
–
40
–
–
30
–
–
SUPERVISORY AND CONTROL CIRCUITS
EN1 and EN2 Propagation Delay
t_PROP
–
–
280
ns
INT Rise Time CL = 100 pF
t_RINT
10
–
250
ns
INT Fall Time CL = 100 pF
t_FINT
10
–
200
ns
INT Propagation Time
RST Transition Time (Rise and Fall)⁽⁴⁹⁾,⁽⁵¹⁾
t_PROPINT
–
t_TRRST
–
–
250
ns
–
1.25
µs
Notes
49. This parameter is guaranteed by design, not production tested.
50. Rise and fall times are measured from the transition of a step function on the input to 90% of the change in output voltage.
51. t_TRRST is given as a design guideline. The bounds for this specification are VPWR  58 V, total capacitance on VLS > 1.0 µF.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33937A
15