K50P121M100SF2 Datasheet, PDF (13/69 Pages) Freescale Semiconductor, Inc – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

1. Rising thresholds are falling threshold + hysteresis voltage
Table 3. VBAT power operating requirements
Symbol Description
V_{POR_VBAT} Falling VBAT supply POR detect voltage
Min.
TBD
Typ.
1.1
Max.
TBD
General
Unit
Notes
V
5.1.3 Voltage and current operating behaviors
Table 4. Voltage and current operating behaviors
Symbol
V_OH
Description
Output high voltage — high drive strength
• 2.7 V ≤ V_DD ≤ 3.6 V, I_OH = -10mA
• 1.71 V ≤ V_DD ≤ 2.7 V, I_OH = -3mA
Min.
V_DD – 0.5
V_DD – 0.5
Max.
—
—
Unit
V
V
Output high voltage — low drive strength
• 2.7 V ≤ V_DD ≤ 3.6 V, I_OH = -2mA
• 1.71 V ≤ V_DD ≤ 2.7 V, I_OH = -0.6mA
V_DD – 0.5
—
V
V_DD – 0.5
—
V
I_OHT
Output high current total for all ports
V_OL
Output low voltage — high drive strength
• 2.7 V ≤ V_DD ≤ 3.6 V, I_OL = 10mA
• 1.71 V ≤ V_DD ≤ 2.7 V, I_OL = 3mA
—
100
mA
—
0.5
V
—
0.5
V
Output low voltage — low drive strength
• 2.7 V ≤ V_DD ≤ 3.6 V, I_OL = 2mA
• 1.71 V ≤ V_DD ≤ 2.7 V, I_OL = 0.6mA
—
0.5
V
—
0.5
V
I_OLT
I_IN
I_{ILKG_A}
I_OZ
R_PU
R_PD
Output low current total for all ports
Input leakage current (per pin) except TRI0_DM,
TRI0_DP, TRI1_DM, TRI1_DP
Input leakage current (per pin) for TRI0_DM,
TRI0_DP, TRI1_DM, TRI1_DP
Hi-Z (off-state) leakage current (per pin)
Internal pullup resistors
Internal pulldown resistors
—
100
mA
—
1
μA
—
1
nA
—
1
μA
30
50
kΩ
30
50
kΩ
1. Measured at VDD=3.6V
2. Measured at V_DD supply voltage = V_DD min and Vinput = V_SS
3. Measured at V_DD supply voltage = V_DD min and Vinput = V_DD
Notes
1
1
2
3
K50 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Freescale Semiconductor, Inc.
Preliminary
13