MC9S12D64 Datasheet, PDF (103/128 Pages) Freescale Semiconductor, Inc – Device User Guide V01.20

MC9S12DJ64 Device User Guide — V01.20
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Table A-12 NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min
Typ
Data Retention at an average junction temperature of
1 C _{TJavg = 85°C1}
t_NVMRET
15
2 C Flash number of Program/Erase cycles
n_FLPE
10,000
EEPROM number of Program/Erase cycles
3 C _{(–40°C ≤ TJ ≤ 0°C)}
n_EEPE
10,000
EEPROM number of Program/Erase cycles
4 C _{(0°C < TJ ≤ 140°C)}
n_EEPE
100,000
NOTES:
1. Total time at the maximum guaranteed device operating temperature <= 1 year
Max
Unit
Years
Cycles
Cycles
Cycles
103