MC9S12DT128CPVE Datasheet, PDF (102/128 Pages) Freescale Semiconductor, Inc – Device User Guide

MC9S12DT128B Device User G^Fu^rid^ee^e—^sV^c0^a1.^l0^e9 ^{Semiconductor, Inc.}
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
t_era ≈ 4000 ⋅ _f--N----_V----1_M-----_O----_P--
The setup times can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
t_mass ≈ 20000 ⋅ _f--N----_V----1_M-----_O----_P--
The setup times can be ignored for this operation.
A.3.1.5 Blank Check
The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
t_check ≈ location ⋅ t_cyc + 10 ⋅ t_cyc
Table A-11 NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min
Typ
Max
Unit
1 D External Oscillator Clock
f_NVMOSC
0.5
50 ¹
MHz
2 D Bus frequency for Programming or Erase Operations f_NVMBUS
1
MHz
3 D Operating Frequency
f_NVMOP
150
200
kHz
4 P Single Word Programming Time
t_swpgm
46 ²
74.5 ³
µs
5 D _{Flash Burst Programming consecutive word} ⁴
t_bwpgm
20.4 ²
31 ³
µs
6 D _{Flash Burst Programming Time for 32 Words} ⁴
t_brpgm
678.4 ²
1035.5 ³
µs
7 P Sector Erase Time
t_era
20 ⁵
26.7 ³
ms
8 P Mass Erase Time
t_mass
100 ⁵
133 ³
ms
9 D Blank Check Time Flash per block
t_check
11 ⁶
32778 ⁷
t_cyc
10 D Blank Check Time EEPROM per block
t_check
11 ⁶
2058⁷
t_cyc
NOTES:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency f_NVMOP and maximum bus frequency
f_bus.
3. Maximum Erase and Programming times are achieved under particular combinations of f_NVMOP and bus frequency f_bus.
Refer to formulae in Sections A.3.1.1 - A.3.1.5 for guidance.
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